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參數資料
| 型號： | Am29LV104BT-70ECB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory |
| 中文描述： | 4兆位（512畝× 8位），3.0伏的CMOS只，引導扇區32引腳閃存 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 48K |
| 代理商： | AM29LV104BT-70ECB |
ADVANCE INFORMATION
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Refer to AMD’s Website (www.amd.com) for the latest information.
Publication#
21353
Issue Date:
February1998
Rev:
A
Amendment/
+1
Am29LV104B
4 Megabit (512 K x 8-Bit)
CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
I
Manufactured on 0.35 μm process technology
I
High performance
— Full voltage range: access times as fast as 70 ns
— Regulated voltage range: access times as fast
as 55 ns
I
Ultra low power consumption
— Automatic sleep mode: 1 μA (typical values at
5 MHz)
— Standby mode: 1 μA
— Read mode: 7 mA
— Program/erase mode: 15 mA
I
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
seven 64 Kbyte sectors
— Any combination of sectors can be erased;
supports full chip erase
— Sector Protection features:
Hardware method of locking a sector to prevent
any program or erase operations within that
sector
Sectors can be locked via programming
equipment
I
Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
I
Embedded Algorithms
— Embedded Erase algorithms automatically
preprogram and erase the entire chip or any
combination of designated sectors
— Embedded Program algorithms automatically
writes and verifies data at specified addresses
I
Minimum 1,000,000 write/erase cycles
guaranteed
I
Package option
— 32-pin PLCC
— 32-pin TSOP
I
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase cycle completion
I
Erase Suspend/Resume
— Supports reading data from or programming
data to a sector not being erased
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| Am29LV104BT-70EE | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory |
| Am29LV104BT-70EEB | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory |
| Am29LV104BB-120JC | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory |
| Am29LV104BB-120JCB | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory |
| Am29LV104BB-120JE | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AM29LV116BT-90EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV116DB-70EI | 制造商:Spansion 功能描述: |
| AM29LV116DB-90EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV116DT-70EC | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8 70ns 40-Pin TSOP |
| AM29LV116DT-90EI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Advanced Micro Devices 功能描述: |
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