- 您現在的位置：買賣IC網 > PDF目錄366485 > Am29LV160BB80REEB (Advanced Micro Devices, Inc.) 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory PDF資料下載
參數資料
| 型號： | Am29LV160BB80REEB |
| 廠商： | Advanced Micro Devices, Inc. |
| 元件分類： | FLASH |
| 英文描述： | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 16Mb(2M×8位/1Mx16位), 3V, CMOS引導扇區閃存 |
| 文件頁數： | 1/46頁 |
| 文件大小： | 649K |
| 代理商： | AM29LV160BB80REEB |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁
PRELIMINARY
Publication#
21358
Issue Date:
March 1998
Rev:
F
Amendment/
+2
Am29LV160B
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read
and write operations and for compatibility with
high performance 3.3 volt microprocessors
I
Manufactured on 0.35 μm process technology
I
Supports Common Flash Memory Interface
(CFI)
I
High performance
— Full voltage range: access times as fast as 90 ns
— Regulated voltage range: access times as fast
as 80 ns
I
Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 9 mA read current
— 20 mA program/erase current
I
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
thirty-one 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
thirty-one 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
I
Top or bottom boot block configurations
available
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Minimum 1,000,000 write cycle guarantee per
sector
I
Package option
— 48-ball FBGA
— 48-pin TSOP
— 44-pin SO
I
CFI (Common Flash Interface) compliant
— Provides device-specific information to the
system, allowing host software to easily
reconfigure for different Flash devices
I
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
I
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion (not
available on 44-pin SO)
I
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
I
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
相關PDF資料 |
PDF描述 |
|---|---|
| AM29LV160DB-120EI | Time-Delay Relay; Time Range:1 sec. to 480 sec.; Timing Function:Delay-On-Make; Leaded Process Compatible:Yes; Supply Voltage Max:288V; Supply Voltage Min:19V; Time Range Max:480s; Time Range Min:3s RoHS Compliant: Yes |
| AM29LV160DB-120FC | Time-Delay Relay; Contacts:NO; Time Range:1 sec. to 1024 sec.; Timing Function:Delay-On-Make; Leaded Process Compatible:Yes; Supply Voltage Max:288V; Supply Voltage Min:19V; Time Range Max:1024s; Time Range Min:1s RoHS Compliant: Yes |
| AM29LV160DB-120EC | INTERVAL/SINGLE SHOT TIMER |
| AM29LV160DB-70WCC | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160DB-90WCC | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AM29LV160BT-120EI | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 90ns 48-Pin TSOP Tray |
| AM29LV160BT80SC | 制造商:AMD 功能描述:* |
| AM29LV160BT-90EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 1M x 16, 48 Pin, Plastic, TSSOP |
| AM29LV160BT-90FC | 制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:1M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| AM29LV160DB120EI | 制造商:Advanced Micro Devices 功能描述: |
發布緊急采購，3分鐘左右您將得到回復。