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參數(shù)資料
型號(hào)： AM29LV160DB-70SI
廠商： ADVANCED MICRO DEVICES INC
元件分類(lèi)： PROM
英文描述： 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述： 1M X 16 FLASH 3V PROM, 70 ns, PDSO44
封裝： MO-180AA, SOP-44
文件頁(yè)數(shù)： 1/49頁(yè)
文件大小： 758K
代理商： AM29LV160DB-70SI
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
22358
Issue Date:
November 10, 2000
Rev:
B
Amendment/
+3
Am29LV160D
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
I
Manufactured on 0.23
μm process technology
— Fully compatible with 0.32 μm Am29LV160B device
I
High performance
— Access times as fast as 70 ns
I
Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 9 mA read current
— 20 mA program/erase current
I
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
thirty-one 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
thirty-one 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
I
Top or bottom boot block configurations
available
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Minimum 1,000,000 write cycle guarantee
per sector
I
20-year data retention at 125
°
C
— Reliable operation for the life of the system
I
Package option
— 48-ball FBGA
— 48-pin TSOP
— 44-pin SO
I
CFI (Common Flash Interface) compliant
— Provides device-specific information to the
system, allowing host software to easily
reconfigure for different Flash devices
I
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting program
or erase operation completion
I
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion (not available
on 44-pin SO)
I
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
I
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
相關(guān)PDF資料
PDF描述
AM29LV160DB-70WCE 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB-70WCI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB-90EC 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB-90EE 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB-90EI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV160DB-90EC 制造商:Advanced Micro Devices 功能描述:
AM29LV160DB90EI 制造商:AMD 功能描述:NEW 制造商:SOCO 功能描述: 制造商:Spansion 功能描述:
AM29LV160DB-90EI 制造商:Advanced Micro Devices 功能描述:
AM29LV160DB-90EI\\T 制造商:Advanced Micro Devices 功能描述:
AM29LV160DB-90EI\T 制造商:Advanced Micro Devices 功能描述:
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