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參數資料
| 型號： | AM29LV200BT-120DRI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 |
| 中文描述： | 128K X 16 FLASH 3V PROM, 120 ns, UUC43 |
| 封裝： | DIE-43 |
| 文件頁數： | 1/11頁 |
| 文件大?。?/td> | 200K |
| 代理商： | AM29LV200BT-120DRI |
SUPPLEMENT
Publication#
26014
Issue Date:
November 18, 2003
Rev:
A
Amendment/
+2
Am29LV200B Known Good Die
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
DISTINCTIVE CHARACTERISTICS
■
Single power supply operation
— 2.7 to 3.6 volt read and write operations for
battery-powered applications
■
Manufactured on 0.32 μm process technology
■
High performance
—
60R, 70, 90, 120
ns access time
■
Low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
■
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
seven 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
seven 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that
sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
■
Top or Bottom boot block configuration
■
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■
Minimum 1,000,000 write cycle guarantee
per sector
■
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
■
Data# Polling and toggle bits
— Provides a software method of detecting program
or erase operation completion
■
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
■
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
■
20-year data retention at 125
°
C
■
Tested to datasheet specifications at
temperature
■
Quality and reliability levels equivalent to
standard packaged components
■
500 μm or 280 μm die thickness shipping options
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| AM29LV200BT-120DTC | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 |
| AM29LV200BT-120DTI | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 |
| AM29LV200BT-120DWC | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 |
| AM29LV200BT-120DWI | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 |
| AM29LV200BT35DPI1 | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 |
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