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參數(shù)資料
型號: AM29LV200BT35DTI1
廠商: Advanced Micro Devices, Inc.
英文描述: 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
中文描述: 2兆位(256畝x 8-Bit/128畝x 16位),3.0伏的CMOS只,引導(dǎo)扇區(qū)快閃記憶體,修編模具1
文件頁數(shù): 1/11頁
文件大小: 200K
代理商: AM29LV200BT35DTI1
SUPPLEMENT
Publication#
26014
Issue Date:
November 18, 2003
Rev:
A
Amendment/
+2
Am29LV200B Known Good Die
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
DISTINCTIVE CHARACTERISTICS
Single power supply operation
— 2.7 to 3.6 volt read and write operations for
battery-powered applications
Manufactured on 0.32 μm process technology
High performance
60R, 70, 90, 120
ns access time
Low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
seven 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
seven 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that
sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
Top or Bottom boot block configuration
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
Minimum 1,000,000 write cycle guarantee
per sector
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
Data# Polling and toggle bits
— Provides a software method of detecting program
or erase operation completion
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
20-year data retention at 125
°
C
Tested to datasheet specifications at
temperature
Quality and reliability levels equivalent to
standard packaged components
500 μm or 280 μm die thickness shipping options
相關(guān)PDF資料
PDF描述
AM29LV200BT35DWC1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
AM29LV200BT35DWE1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
AM29LV200BT35DWI1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
AM29LV200BT50DFC1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
AM29LV200BT50DFE1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
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