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參數資料
型號: AM29LV320MT90RWCI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
中文描述: 2M X 16 FLASH 3V PROM, 90 ns, PBGA48
封裝: 9 X 8 MM, 0.80 MM PITCH, FBGA-48
文件頁數: 1/61頁
文件大小: 1395K
代理商: AM29LV320MT90RWCI
DATASHEET
Publication#
26518
Issue Date:
May 16, 2003
Rev:
B
Amendment/
0
Refer to AMD’s Website (www.amd.com) for the latest information.
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Am29LV320MT/B
32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit
3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Single power supply operation
— 3 V for read, erase, and program operations
Manufactured on 0.23 μm MirrorBit process
technology
SecSi
(Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— Sixty-three 32 Kword/64-Kbyte sectors
— Eight 4 Kword/8 Kbyte boot sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
Minimum 100,000 erase cycle guarantee per sector
20-year data retention at 125
°
C
PERFORMANCE CHARACTERISTICS
High performance
— 90 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 15 μs typical effective write buffer word programming
time: 16-word/32-byte write buffer reduces overall
programming time for multiple-word/byte updates
— 4-word/8-byte page read buffer
— 16-word/32-byte write buffer
Low power consumption (typical values at 3.0 V, 5
MHz)
— 13 mA typical active read current
— 50 mA typical erase/program current
— 1 μA typical standby mode current
Package options
— 48-pin TSOP
— 48-ball Fine-pitch BGA
— 64-ball Fortified BGA
SOFTWARE & HARDWARE FEATURES
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V
ID
-level method of
changing code in locked sectors
— WP#/ACC input:
Write Protect input (WP#) protects top or bottom two
sectors regardless of sector protection settings
ACC (high voltage) accelerates programming time for
higher throughput during system production
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) indicates program or
erase cycle completion
相關PDF資料
PDF描述
AM29LV320MB90RWCI 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
AM29LV320MT100RWCI 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
AM29LV320MB100RWCI 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
AM29LV320MT110RWCI 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
AM29LV400BT80FI 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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