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參數資料
| 型號： | Am29LV400T-100EIB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 4兆位（512畝x 8-Bit/256畝x 16位），3.0伏的CMOS只引導扇區閃存 |
| 文件頁數： | 1/40頁 |
| 文件大小： | 516K |
| 代理商： | AM29LV400T-100EIB |
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PRELIMINARY
Publication#
20514
Issue Date:
March 1998
Rev:
C
Amendment/
+1
Am29LV400
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read
and write operations and for compatibility with
high performance 3.3 volt microprocessors
I
High performance
— Full voltage range: access times as fast as 100
ns
— Regulated voltage range: access times as fast
as 90 ns
I
Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 10 mA read current
— 20 mA program/erase current
I
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
seven 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
seven 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Top or bottom boot block configurations
available
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Typical 1,000,000 write cycles per sector
(100,000 cycles minimum guaranteed)
I
Package option
— 48-ball FBGA
— 48-pin TSOP
— 44-pin SO
I
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
I
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
I
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
I
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
相關PDF資料 |
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| AM29LV400B-120EI | Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 2700pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-20%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: Z5U; Lead Style: Radial Leaded; Lead Dimensions: 0.100" Lead Spacing; Body Dimensions: 0.150" x 0.210" x 0.130"; Container: Bag; Qty per Container: 500 |
| AM29LV400 | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV400B-100SEB | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV400B-100SI | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| Am29LV400B-100SIB | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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