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參數(shù)資料
型號(hào): Am29LV640DH90RWHI
廠商: Advanced Micro Devices, Inc.
英文描述: 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
中文描述: 64兆位(4個(gè)M x 16位),3.0伏的CMOS只均勻部門(mén)閃光控制記憶與VersatileI
文件頁(yè)數(shù): 1/57頁(yè)
文件大小: 1467K
代理商: AM29LV640DH90RWHI
July 2003
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that orig-
inally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate,
and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order
these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Am29LV640D/Am29LV641D
Data Sheet
Publication Number
22366
Revision
B
Amendment
+8
Issue Date
September 20, 2002
相關(guān)PDF資料
PDF描述
AM29LV640DH90RZI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV640DL101REEN 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV640DL101REI Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 30pF; Working Voltage (Vdc)[max]: 500V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.100" Lead Spacing; Body Dimensions: 0.150" x 0.210" x 0.130"; Container: Bag; Qty per Container: 500
Am29LV640DL101RFI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV640DL101RPCE Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 30pF; Working Voltage (Vdc)[max]: 1000V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.100" Lead Spacing; Body Dimensions: 0.150" x 0.210" x 0.130"; Container: Bag; Qty per Container: 500
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV640DL90RZI 制造商:Advanced Micro Devices 功能描述:
AM29LV640DU-90NI 制造商:Advanced Micro Devices 功能描述:
AM29LV640DU90REI 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 4MX16 90NS 48TSOP - Trays
AM29LV640DU-90RWHIT 制造商:Advanced Micro Devices 功能描述:63-BALL FINE-PITCH BALL GRID ARRAY (FBGA) 0.80 MM PITCH, 11 X 12 MM PACKAGE (FBE063)
AM29LV640MB-90REI 制造商:Advanced Micro Devices 功能描述:
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