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參數資料
| 型號： | Am29LV640DL101RWHI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| 中文描述： | 64兆位（4個M x 16位），3.0伏的CMOS只均勻部門閃光控制記憶與VersatileI |
| 文件頁數： | 1/57頁 |
| 文件大小： | 1467K |
| 代理商： | AM29LV640DL101RWHI |
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July 2003
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that orig-
inally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate,
and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order
these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Am29LV640D/Am29LV641D
Data Sheet
Publication Number
22366
Revision
B
Amendment
+8
Issue Date
September 20, 2002
相關PDF資料 |
PDF描述 |
|---|---|
| Am29LV640DL120REIN | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| Am29LV640DL120RFE | Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 300pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-2%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.100" Lead Spacing; Body Dimensions: 0.150" x 0.210" x 0.130"; Container: Bag; Qty per Container: 500 |
| Am29LV640DL120RFI | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| AM29LV640DL90RZI | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| Am29LV640DU101REEN | Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 33pF; Working Voltage (Vdc)[max]: 1000V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.100" Lead Spacing; Body Dimensions: 0.150" x 0.210" x 0.130"; Container: Bag; Qty per Container: 500 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AM29LV640DL90RZI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV640DU-90NI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV640DU90REI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 4MX16 90NS 48TSOP - Trays |
| AM29LV640DU-90RWHIT | 制造商:Advanced Micro Devices 功能描述:63-BALL FINE-PITCH BALL GRID ARRAY (FBGA) 0.80 MM PITCH, 11 X 12 MM PACKAGE (FBE063) |
| AM29LV640MB-90REI | 制造商:Advanced Micro Devices 功能描述: |
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