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參數(shù)資料
| 型號： | Am29LV800T-100 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
| 中文描述： | 8兆位（1,048,576 x 8-Bit/524，288 x 16位），3.0伏的CMOS只，扇區(qū)閃存 |
| 文件頁數(shù)： | 1/48頁 |
| 文件大?。?/td> | 207K |
| 代理商： | AM29LV800T-100 |
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PRELIMINARY
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Refer to AMD’s Website (www.amd.com) for the latest information.
Publication#
20478
Issue Date:
November 1997
Rev:
D
Amendment/
0
Am29LV800T/Am29LV800B
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit)
CMOS 3.0 Volt-only, Sectored Flash Memory
DISTINCTIVE CHARACTERISTICS
Single power supply operation
— Extended voltage range: 2.7 to 3.6 volt read and
write operations for battery-powered
applications
— Standard voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
I
I
High performance
— Extended voltage range: access times as fast as
100 ns
— Standard voltage range: access times as fast as
90 ns
I
Ultra low power consumption
— Automatic Sleep Mode: 200 nA typical
— Standby mode: 200 nA typical
— Read mode: 2 mA/MHz typical
— Program/erase mode: 20 mA typical
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
fifteen 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
fifteen 32 Kword sectors (word mode)
— Supports control code and data storage on a
single device
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
I
Top or bottom boot block configurations
available
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Embedded Algorithms
— Embedded Erase algorithms automatically
preprogram and erase the entire chip or any
combination of designated sectors
— Embedded Program algorithms automatically
write and verify bytes or words at specified
addresses
I
Minimum 100,000 write cycle guarantee per
sector
Package options
— 48-pin TSOP
— 44-pin SO
I
I
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
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Data Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
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Ready/Busy pin (RY/BY)
— Provides a hardware method of detecting
program or erase cycle completion
I
Erase suspend/resume commands
— Suspends the erase operation to read data from
or program data to another sector, then resumes
the erase operation
I
Hardware reset pin (RESET)
— Hardware method to reset the device to the read
mode
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| AM29LV800BB-120EF | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV800BB-120EK | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV800BB-120FD | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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