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參數資料
| 型號： | AM81719-030 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.400 X 0.400 INCH, HERMETIC SEALED, METAL CERAMIC, M147, AMPAC-2 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 130K |
| 代理商： | AM81719-030 |
PRELIMINARY DATA
September 1992
TELEMETRY APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 SQ 2LFL (M147)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 28 W MIN. WITH 6.7 dB GAIN
DESCRIPTION
The AM81719-030 is a high power silicon NPN
bipolar transistor designed for Class C, CW com-
munications and telemetry applications in the 1.75
- 1.85 GHz frequency range.
An emitter site ballasted refractory/gold overlay
die geometry computerized automatic wire bonding
is employed to ensure long term reliability and
product consistency.
AM81719-030 is supplied in the industry-standard
AMPAC hermetic metal/ceramic package.
PIN CONNECTION
BRANDING
81719-030
ORDER CODE
AM81719-030
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
67.3
W
IC
Device Current*
2.67
A
VCC
Collector-Supply Voltage*
28
V
TJ
Junction Temperature
200
°C
TSTG
Storage Temperature
65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
2.6
°C/W
*Applies only to rated RF amplifier operation
AM81719-030
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/4
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