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參數(shù)資料
| 型號(hào)： | AMD29F010B-55EE |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 1兆位（128畝× 8位）的CMOS 5.0伏只，統(tǒng)一部門(mén)快閃記憶體 |
| 文件頁(yè)數(shù)： | 1/34頁(yè) |
| 文件大小： | 779K |
| 代理商： | AMD29F010B-55EE |
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This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
22336
Issue Date:
November 28, 2000
Rev:
C
Amendment/
0
Am29F010B
1 Megabit (128 K x 8-bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— 5.0 V ± 10% for read, erase, and program operations
— Simplifies system-level power requirements
I
Manufactured on 0.32
μm process technology
— Compatible with Am29F010 and Am29F010A
device
I
High performance
— 45 ns maximum access time
I
Low power consumption
— 12 mA typical active read current
— 30 mA typical program/erase current
— <1 μA typical standby current
I
Flexible sector architecture
— Eight 16 Kbyte sectors
— Any combination of sectors can be erased
— Supports full chip erase
I
Sector protection
— Hardware-based feature that disables/re-
enables program and erase operations in any
combination of sectors
— Sector protection/unprotection can be
implemented using standard PROM
programming equipment
I
Embedded Algorithms
— Embedded Erase algorithm automatically
pre-programs and erases the chip or any
combination of designated sector
— Embedded Program algorithm automatically
programs and verifies data at specified address
I
Erase Suspend/Resume
— Supports reading data from a sector not
being erased
I
Minimum 1 million erase cycles guaranteed per
sector
I
20-year data retention at 125
°
C
— Reliable operation for the life of the system
I
Package options
— 32-pin PLCC
— 32-pin TSOP
— 32-pin PDIP
I
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
I
Data# Polling and Toggle Bits
— Provides a software method of detecting
program or erase cycle completion
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AMD29F010B-55EI | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AMD29F010B-55FC | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AMD29F010B-55FE | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AMD29F010B-55FI | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AMD29F010B-55JC | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AMD29F010B-55EI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AMD29F010B-55FC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AMD29F010B-55FE | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AMD29F010B-55FI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AMD29F010B-55JC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
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