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| 型號(hào)： | AME8570AEITCF29Z |
| 廠商： | AME, Inc. |
| 英文描述： | mProcessor Supervisory |
| 中文描述： | mProcessor監(jiān)督 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 90K |
| 代理商： | AME8570AEITCF29Z |
Document Number: 81001
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
Rev. 1.8, 16-May-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
CQY36N
Vishay Semiconductors
DESCRIPTION
CQY36N is an infrared, 950 nm emitting diode in GaAs
technology molded in a miniature, clear plastic package
without lens.
FEATURES
Package type: leaded
Package form: T-
Dimensions (in mm): 1.8
Peak wavelength:
p = 950 nm
High reliability
Angle of half intensity:
= ± 55°
Low forward voltage
Suitable for high pulse current operation
Good spectral matching with Si photodetectors
Package matches with detector BPW16N
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance with WEEE 2002/96/EC
APPLICATIONS
Radiation source in near infrared range
Note
Test conditions see table “Basic Characteristics“
Note
MOQ: minimum order quantity
94 8638
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
(deg)
P (nm)
tr (ns)
CQY36N
1.5
± 55
950
800
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
CQY36N
Bulk
MOQ: 5000 pcs, 5000 pcs/bulk
T-
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
5V
Forward current
IF
100
mA
Surge forward current
tp 100 μs
IFSM
2A
Power dissipation
PV
160
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 25 to + 85
°C
Storage temperature range
Tstg
- 25 to + 100
°C
Soldering temperature
t
3 s
Tsd
245
°C
Thermal resistance junction/ambient
leads not soldered
RthJA
450
K/W
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