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參數資料
型號: AMMC-5620-W50
廠商: AGILENT TECHNOLOGIES INC
元件分類: 放大器
英文描述: 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: 0.0555 X 0.0397 INCH, DIE
文件頁數: 1/8頁
文件大小: 101K
代理商: AMMC-5620-W50
Note: These devices are ESD sensitive. The following precautions are strongly recommended:
Ensure that an ESD approved carrier is used when dice are transported from one destination to another.
Personal grounding is to be worn at all times when handling these devices.
Agilent AMMC-5620
6 - 20 GHz High Gain Amplifier
Data Sheet
Description
Agilent’s AMMC- 5620 MMIC is a
GaAs wide- band amplifier
designed for medium output
power and high gain over the 6
20 GHz frequency range. The
3 cascaded stages provide high
gain while the single bias
supply offers ease of use. It is
fabricated using a PHEMT
integrated circuit process. The
RF input and output ports have
matching circuitry for use in
50-
environments. The
backside of the chip is both RF
and DC ground. This helps
simplify the assembly process
and reduces assembly related
performance variations and
costs. For improved reliability
and moisture protection, the die
is passivated at the active areas.
The MMIC is a cost effective
alternative to hybrid (discrete
FET) amplifiers that require
complex tuning and assembly
processes.
Features
Frequency Range: 6 - 20 GHz
High Gain: 19 dB Typical
Output Power: 15dBm Typical
Input and Output Return Loss: < -10
dB
Positive Gain Slope: + 0.21dB/GHz
Typical
Single Supply Bias: 5 V @ 95 mA
Typical
Applications
General purpose, wide-band
amplifier in communication
systems or microwave
instrumentation
High gain amplifier
AMMC-5620 Absolute Maximum Ratings [1]
Symbol
Parameters/Conditions
Units
Min.
Max.
VDD
Drain Supply Voltage
V
7.5
IDD
Total Drain Current
mA
135
PDC
DC Power Dissipation
W
1.0
Pin
RF CW Input Power
dBm
20
Tch
Channel Temp.
°C
+150
Tb
Operating Backside Temp.
°C
-55
Tstg
Storage Temp.
°C
-65
+165
Tmax
Maximum Assembly Temp. (60 sec max)
°C
+300
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Chip Size:
1410 x 1010 m (55.5 x 39.7 mils)
Chip Size Tolerance:± 10m (± 0.4 mils)
Chip Thickness:
100 ± 10m (4 ± 0.4 mils)
Pad Dimensions: 80 x 80 m (3.1 x 3.1 mils or larger)
相關PDF資料
PDF描述
AMMC-5620-W10 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
AMMC-5620-W50 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
AMMC-6120-W50 8000 MHz - 20000 MHz RF/MICROWAVE FREQUENCY DOUBLER
AMMC-6140-W10 10000 MHz - 20000 MHz RF/MICROWAVE FREQUENCY DOUBLER
AMMC-6140-W50 10000 MHz - 20000 MHz RF/MICROWAVE FREQUENCY DOUBLER
相關代理商/技術參數
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AMMC-6120-W10 功能描述:射頻放大器 Doubler MMIC 6-20GHz RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數:0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
AMMC-6120-W50 功能描述:射頻放大器 Doubler MMIC 6-20GHz RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數:0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
AMMC-6140-W10 功能描述:射頻無線雜項 Doubler MMIC 6-40GHz RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel
AMMC-6140-W50 功能描述:射頻無線雜項 Doubler MMIC 6-40GHz RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel
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