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參數資料
型號: AO4408L
廠商: Alpha Industries, Inc.
英文描述: LJT 26C 26#20 SKT REAR WALL
中文描述: N溝道增強模式場效應晶體管
文件頁數: 1/5頁
文件大小: 122K
代理商: AO4408L
Symbol
V
DS
V
GS
I
DM
I
AV
E
AV
T
J
, T
STG
Symbol
Typ
23
48
12
Max
40
65
16
R
θ
JL
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
10s
Steady-State
R
θ
JA
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
V
V
±12
12
10
80
30
100
3
2.1
Pulsed Drain Current
B
Avalanche Current
B,E
Repetitive Avalanche Energy
B,E
L=0.1mH
Power Dissipation
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
Gate-Source Voltage
Continuous Drain
Current
A
Drain-Source Voltage
A
I
D
Maximum
30
Units
T
A
=25°C
T
A
=70°C
mJ
W
A
P
D
°C
-55 to 150
AO4408, AO4408L (Green Product)
N-Channel Enhancement Mode Field Effect Transistor
Rev 3: June 2004
Features
V
DS
(V) = 30V
I
D
= 12A
R
DS(ON)
< 13m
(V
GS
= 10V)
R
DS(ON)
< 16m
(V
GS
= 4.5V)
General Description
The AO4408 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and fast
switching. This device makes an excellent high side
switch for notebook CPU core DC-DC conversion.
AO4408L(Green Product) is offered in a lead-free
package.
SOIC-8
G
S
S
S
D
D
D
D
G
D
S
Alpha & Omega Semiconductor, Ltd.
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相關代理商/技術參數
參數描述
AO4409 功能描述:MOSFET P-CH -30V -15A 8-SOIC RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
AO4409_11 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET
AO4410 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor
AO4410_10 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET
AO4410L 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor
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