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參數(shù)資料
| 型號(hào)： | AOL1718 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 90 A, 30 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | GREEN, ULTRASO-8, 3 PIN |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 260K |
| 代理商： | AOL1718 |
AOL1718
30V N-Channel MOSFET
General Description
Product Summary
VDS
ID (at VGS=10V)
90A
RDS(ON) (at VGS=10V)
< 3m
RDS(ON) (at VGS = 4.5V)
< 4.3m
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
RθJC
Maximum Junction-to-Case
°C/W
Maximum Junction-to-Ambient
A D
1
60
1.5
Power Dissipation
B
PD
W
Power Dissipation
A
PDSM
W
TA=70°C
100
1.3
TA=25°C
A
TA=25°C
IDSM
A
TA=70°C
ID
90
71
TC=25°C
TC=100°C
Avalanche energy L=0.1mH
C
mJ
Avalanche Current
C
16
Continuous Drain
Current
80
21
A
40
SRFET
TM AOL1718 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON) and low gate charge. This device is
ideally suited for use as a low side switch in CPU core
power conversion.
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
30V
V
±20
Gate-Source Voltage
Drain-Source Voltage
30
Units
Maximum Junction-to-Ambient
A
°C/W
RθJA
20
48
25
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
410
Pulsed Drain Current
C
Continuous Drain
Current
G
Parameter
Typ
Max
TC=25°C
2.1
50
TC=100°C
SRFET TM
G
D
S
SRFET
TM
Soft Recovery MOSFET:
Integrated Schottky Diode
UltraSO-8
TM
Top View
Bottom View
G
D
S
G
S
Rev 2: April 2011
www.aosmd.com
Page 1 of 7
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