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參數資料
| 型號： | AON6718 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 80 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 6 X 5 MM, GREEN, DFN-8 |
| 文件頁數： | 2/7頁 |
| 文件大小： | 174K |
| 代理商： | AON6718 |
AON6718
Symbol
Min
Typ
Max
Units
BVDSS
30
V
VDS=30V, VGS=0V
0.025
0.1
TJ=125°C
20
IGSS
0.1
A
VGS(th)
Gate Threshold Voltage
1.3
1.8
2.2
V
ID(ON)
160
A
3.1
3.7
TJ=125°C
4.3
5.2
4.1
5
m
gFS
87
S
VSD
0.4
0.7
V
IS
40
A
Ciss
2975
3719
4463
pF
Coss
485
693
900
pF
Crss
204
340
476
pF
Rg
0.28
0.56
0.84
Qg(10V)
48
60
72
nC
Qg(4.5V)
20
25
30
nC
Qgs
12
15
18
nC
Qgd
6
10
14
nC
tD(on)
9.2
ns
tr
10.7
ns
tD(off)
40
ns
tf
12.5
ns
trr
10
13
16
ns
Qrr
21
26.5
32
nC
Rev3: Nov-10
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s
Maximum Body-Diode Continuous Current
G
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75,
RGEN=3
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
VGS=10V, VDS=15V, ID=20A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
m
IS=1A,VGS=0V
VDS=5V, ID=20A
VGS=4.5V, ID=20A
Forward Transconductance
Diode Forward Voltage
RDS(ON)
Static Drain-Source On-Resistance
IDSS
mA
VDS=VGS ID=250A
VDS=0V, VGS= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
ID=250A, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=20A
Reverse Transfer Capacitance
IF=20A, dI/dt=500A/s
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相關代理商/技術參數 |
參數描述 |
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| AON6718L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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| AON6748_101 | 功能描述:MOSFET N-CH DFN 制造商:alpha & omega semiconductor inc. 系列:* 零件狀態:停產 標準包裝:3,000 |
| AON6748_102 | 功能描述:MOSFET N-CH DFN 制造商:alpha & omega semiconductor inc. 系列:* 零件狀態:停產 標準包裝:3,000 |
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