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參數資料
| 型號： | AP05N50S-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 95K |
| 代理商： | AP05N50S-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ 100% Avalanche Test
BVDSS
500V
▼ Fast Switching Characteristic
RDS(ON)
1.4Ω
▼ Simple Drive Requirement
ID
5.0A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
1
A
PD@TC=25℃
Total Power Dissipation
W
EAS
Single Pulse Avalanche Energy
2
mJ
IAR
Avalanche Current
A
TSTG
℃
TJ
Operating Junction Temperature Range
℃
Thermal Data
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
1.7
℃
/W
Rthj-a
40
℃
/W
Data & specifications subject to change without notice
5.0
18
73.5
3
2.8
45
-55 to 150
1
AP05N50S-HF
+20
Rating
500
Halogen-Free Product
200906221
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Parameter
Storage Temperature Range
-55 to 150
The TO-263 package is widely preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC
converters.
G
D
S
The AP05N50 provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching, ruggedized design and cost-effectiveness.
G
D
S
TO-263(S)
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