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參數資料
| 型號： | AP10N60W |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 185K |
| 代理商： | AP10N60W |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ 100% Avalanche Test
BVDSS
600V
▼ Fast Switching Characteristic
RDS(ON)
0.75Ω
▼ Simple Drive Requirement
ID
10A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
1
A
PD@TC=25℃
Total Power Dissipation
W
EAS
Single Pulse Avalanche Energy
2
mJ
IAR
Avalanche Current
A
TSTG
℃
TJ
Operating Junction Temperature Range
℃
Thermal Data
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
0.8
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
40
℃/W
Data & specifications subject to change without notice
Parameter
200803181
10
36
156
10
5.8
50
1
AP10N60W
± 30
Rating
600
RoHS-compliant Product
Parameter
-55 to 150
Storage Temperature Range
-55 to 150
The TO-3P package is widely preferred for commercial-industrial
applications. The device is suited for switch mode power supplies,
DC-AC converters and high current high speed switching circuits.
G
D
S
AP10N60 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. The
TO-3P type provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
G
D
S
TO-3P
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