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參數資料
| 型號： | AP137-501 |
| 元件分類： | 放大器 |
| 英文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 59K |
| 代理商： | AP137-501 |
Alpha Industries, Inc. [978] 241-7000
Fax [978] 241-7906 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 2/02A
Quad-Band GSM
Power Amplifier Module
Features
■ First Quad-Band InGaP HBT GSM
PA Module
■ 3.2 V Nominal Operating Voltage
■ 50 Internally Matched Input and Output
■ High Power Added Efficiency: 55% for
GSM and 50% for DCS and PCS
■ Small Size: 10 x 8 x 1.6 mm MCM Land
Grid Array Package
■ Low Current Standby Mode: < 30 A
■ Integral Band Select and Analog
Power Control
■ GPRS Class 12 Capable
-501
AP137-501
0.394 (10.0 mm)
± 0.004 (0.1 mm)
0.315 (8.0 mm)
± 0.004 (0.1 mm)
SIDE VIEW
TOP VIEW
BOTTOM VIEW
PIN 1
INDICATOR
0.069 (1.75 mm)
± 0.002 (0.051 mm)
0.069 (1.75 mm)
± 0.002 (0.051 mm)
0.082 (2.09 mm)
± 0.002 (0.051 mm)
0.046 (1.18 mm)
± 0.002 (0.051 mm)
0.06 (1.56 mm)
± 0.004 (0.10 mm)
0.04 (1.05 mm)
± 0.002 (0.05 mm)
0.075 (1.91 mm) BSC
0.075
(1.91 mm)
BSC
MOLD CAP
16
1
Description
The AP137-501 is a high performance power amplifier
module designed for use as the final amplification stage
in multi-band GSM and GPRS mobile phone applications
(824–849, 880–915, 1710–1785 and 1850–1910 MHz).
It features 3-cell battery operation, a band select switch,
a single positive analog power control input for all three
bands, and exceptional power added efficiency. The
AP137-501 also incorporates an advanced silicon bipolar
power control ASIC providing an outstandingly smooth and
flat power control response, greatly improving the ease
of use. The amplifier IC’s are manufactured on an
advanced InGaP HBT process, known industry-wide for
its excellent reliability, ruggedness and performance. The
amplifier module is completely self-contained, requiring
no external matching components, and packaged in a
small land grid array package.
Preliminary
Parameter
Condition
Min.
Typ.
Max.
Unit
Supply Voltage
2.8
3.2
4.2
V
Leakage Current
No Input RF Power
30
A
Band Select Voltage
GSM
0
0.5
V
DCS/PCS
2.0
2.8
V
Band Select Current
1.0
mA
Power Control Voltage
0.1
1.9
V
Power Control Current
1.0
mA
DC Specifications
Characteristic
Value
Supply Voltage VCC, Standby
6.5 V Max.
Mode, VAPC < 0.3 (No RF Input Power)
Power Control Voltage
4 V Max.
Band Select Voltage
4 V Max.
Input Power (CW)
15 dBm Max.
Operating Case Temperature
-35 to +85°C
Storage Temperature
-45 to 120°C
Absolute Maximum Ratings
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