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參數資料
| 型號： | AP13N50I |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 14 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 71K |
| 代理商： | AP13N50I |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
500V
▼ Simple Drive Requirement
RDS(ON)
0.52Ω
▼ Fast Switching Characteristic
ID
14A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
EAS
Single Pulse Avalanche Energy
2
mJ
IAR
Avalanche Current
A
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
201017072-1/4
AP13N50I
RoHS-compliant Product
Parameter
Rating
Drain-Source Voltage
500
Gate-Source Voltage
±30
Continuous Drain Current, VGS @ 10V
14
Continuous Drain Current, VGS @ 10V
9
Pulsed Drain Current
1
50
Total Power Dissipation
39
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.31
98
14
Thermal Data
Parameter
Storage Temperature Range
G
D
S
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercial-
industrial through hole applications.
G
D
S
TO-220CFM(I)
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