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參數資料
型號: AP18N20GJ-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件頁數: 1/4頁
文件大小: 99K
代理商: AP18N20GJ-HF
AP18N20GH/J-HF
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
200V
▼ Low On-resistance
RDS(ON)
170mΩ
▼ Fast Switching Characteristics
ID
18A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
1
A
PD@TC=25℃
Total Power Dissipation
W
W/℃
PD@TA=25℃
Total Power Dissipation
3
W
TSTG
TJ
Operating Junction Temperature Range
Thermal Data
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
1.4
/W
Rthj-a
62.5
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
/W
Data & specifications subject to change without notice
2
Halogen-Free Product
Parameter
89
-55 to 150
± 20
18
9.5
Rating
200
60
Linear Derating Factor
0.7
201006224
1
Storage Temperature Range
-55 to 150
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
G
D S
TO-251(J)
G
D
S
TO-252(H)
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP18N20GJ)
are available for low-profile applications.
相關PDF資料
PDF描述
AP18N20GH-HF 18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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參數描述
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