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參數(shù)資料
| 型號： | AP18T10GI |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 9 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 94K |
| 代理商： | AP18T10GI |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Fast Switching Performance
BVDSS
100V
▼ Single Drive Requirement
RDS(ON)
160mΩ
▼ Full Isolation Package
ID
9A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
TSTG
℃
TJ
℃
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4.5
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃
/W
Data and specifications subject to change without notice
Storage Temperature Range
Thermal Data
Total Power Dissipation
28
-55 to 150
Operating Junction Temperature Range
-55 to 150
Continuous Drain Current, VGS @ 10V
5.6
Pulsed Drain Current
1
30
Parameter
Rating
Drain-Source Voltage
100
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
200903052
RoHS-compliant Product
1
AP18T10GI
9
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
G
D
S
TO-220CFM(I)
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