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參數資料
| 型號： | AP18T10GM-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 94K |
| 代理商： | AP18T10GM-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low Gate Charge
BVDSS
100V
▼ Single Drive Requirement
RDS(ON)
160mΩ
▼ Surface Mount Package
ID
3A
▼ Halogen Free & RoHS Compliant Product
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance Junction-ambient
3
50
℃
/W
Data and specifications subject to change without notice
Halogen-Free Product
1
AP18T10GM-HF
201004141
Parameter
Rating
Drain-Source Voltage
100
Gate-Source Voltage
+20
Continuous Drain Current
3, V
GS @ 10V
3
Continuous Drain Current
3, V
GS @ 10V
2.1
Pulsed Drain Current
1
12
Total Power Dissipation
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
Thermal Data
Parameter
Storage Temperature Range
G
D
S
S
G
D
SO-8
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
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