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參數(shù)資料
| 型號： | AP2302AGN-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 4.6 A, 20 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 94K |
| 代理商： | AP2302AGN-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Capable of 2.5V gate drive
BVDSS
20V
▼ Lower Gate Charge
RDS(ON)
42mΩ
▼ Surface mount package
ID
4.6A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
90
℃
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
1.38
-55 to 150
Operating Junction Temperature Range
-55 to 150
Continuous Drain Current
3, V
GS @ 4.5V
3.7
Pulsed Drain Current
1
20
Gate-Source Voltage
+8
Continuous Drain Current
3, V
GS @ 4.5V
4.6
Parameter
Rating
Drain-Source Voltage
20
1
AP2302AGN-HF
201009081
Halogen-Free Product
G
D
S
D
G
S
SOT-23
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is widely used for all commercial-industrial
applications.
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相關代理商/技術參數(shù) |
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|---|---|
| AP2302D | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:3A DDR TERMINATION REGULATOR |
| AP2302D-E1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:3A DDR TERMINATION REGULATOR |
| AP2302DTR | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:3A DDR TERMINATION REGULATOR |
| AP2302DTR-E1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:3A DDR TERMINATION REGULATOR |
| AP2302GN | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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