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參數資料
型號: AP2316GN
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 30 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數: 1/4頁
文件大?。?/td> 98K
代理商: AP2316GN
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
30V
▼ Small Package Outline
RDS(ON)
42mΩ
▼ Surface Mount Device
ID
4.7A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
90
/W
Data and specifications subject to change without notice
200811062
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
1.38
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.01
Continuous Drain Current
3, V
GS @ 10V
3.7
Pulsed Drain Current
1
10
Gate-Source Voltage
+20
Continuous Drain Current
3, V
GS @ 10V
4.7
Parameter
Rating
Drain-Source Voltage
30
1
AP2316GN
RoHS-compliant Product
G
D
S
D
G
S
SOT-23
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is widely used for all commercial-industrial
applications.
相關PDF資料
PDF描述
AP2317GN-HF 4.2 A, 20 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET
AP2319GN-HF 3.1 A, 30 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET
AP2320GN-HF 250 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
AP2326GN-HF 4.7 A, 30 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET
AP2328GN-HF 4 A, 30 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET
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