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參數資料
| 型號： | AP2532GY |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 2.4 A, 30 V, 0.13 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-6 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 117K |
| 代理商： | AP2532GY |
Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼ Low Gate Charge
N-CH BVDSS
30V
▼ Fast Switching Performance
RDS(ON)
130mΩ
▼ Surface Mount Package
ID
2.4A
P-CH
BVDSS
-30V
RDS(ON)
250mΩ
Description
ID
-1.8A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25℃
Continuous Drain Current
3
2.4
-1.8
A
ID@TA=70℃
Continuous Drain Current
3
1.9
-1.4
A
IDM
Pulsed Drain Current
1
10
-10
A
PD@TA=25℃
Total Power Dissipation
1.14
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
110
℃/W
Data and specifications subject to change without notice
Parameter
201018074-1/7
AP2532GY
RoHS-compliant Product
G2
D2
S2
G1
D1
S1
D1
S1
G1
S2
G2
D2
SOT-26
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The SOT-26 package is widely used for commercial surface
mount applications.
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