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參數資料
型號: AP2608GY
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 0.57 A, 150 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT PACKAGE-6
文件頁數: 1/4頁
文件大?。?/td> 58K
代理商: AP2608GY
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Fast Switching Characteristic
BVDSS
150V
▼ Lower Gate Charge
RDS(ON)
2.6Ω
▼ Small Footprint & Low Profile Package
ID
0.57A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
62.5
℃/W
Data and specifications subject to change without notice
201005033
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.016
Continuous Drain Current
3, V
GS @ 10V
0.45
Pulsed Drain Current
1
2
Gate-Source Voltage
+20
Continuous Drain Current
3, V
GS @ 10V
0.57
Parameter
Rating
Drain-Source Voltage
150
1
AP2608GY
RoHS-compliant Product
G
D
S
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The S0T-26 package is widely used for commercial-industrial surface
mount applications.
D
G
S
SOT-26
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相關代理商/技術參數
參數描述
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