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參數(shù)資料
| 型號(hào)： | AP30G100W |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 60 A, 1000 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 214K |
| 代理商： | AP30G100W |
Advanced Power
N-CHANNEL INSULATED GATE
Electronics Corp.
BIPOLAR TRANSISTOR
Features
VCES
▼ High speed switching
IC
▼ Low Saturation Voltage
VCE(sat)=3.0V@IC=30A
▼ Industry Standard TO-3P Package
Absolute Maximum Ratings
, 1/8" from case for 5 seconds .
Notes:
1.Repetitive rating : Pulse width limited by max . junction temperature .
Thermal Data
Symbol
Rthj-c
Rthj-a
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Min.
Typ.
Max. Units
BVCES
1000
-
V
IGES
-
±500
nA
ICES
--
1
mA
VCE(sat)
-
3
3.6
V
-
3.8
-
V
VGE(th)
3
4.4
7
V
Qg
-55
88
nC
Qge
-12
-
nC
Qgc
-27
-
nC
td(on)
-30
-
ns
tr
-40
-
ns
td(off)
-
105
-
ns
tf
-
290
440
ns
Eon
-
1.2
-
mJ
Eoff
-
1.7
-
mJ
Cies
-
1320 2110
pF
Coes
-
105
-
pF
Cres
-9
-
pF
Data and specifications subject to change without notice
VCC=500V,
Ic=30A,
VGE=15V,
RG=5,
Inductive Load
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
200828071-1/3
RoHS-compliant Product
Operating Junction Temperature Range
Gate-Emitter Charge
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Leakage Current
VGE=15V, IC=60A
TL
VCE=1000V, VGE=0V
VGE=15V
Thermal Resistance Junction-Ambient
▼ RoHS Compliant
Output Capacitance
Input Capacitance
PD@TC=25℃
TJ
ICM
VCE=30V
Parameter
W
℃
VCC=500V
Maximum Power Dissipation
Test Conditions
Storage Temperature Range
208
℃
Units
℃
/W
f=1.0MHz
-55 to 150
VGE=15V, IC=30A
VCE=VGE, IC=1mA
IC=30A
VGE=±30V, VCE=0V
40
VGE=0V
VGE=0V, IC=250uA
Pulsed Collector Current
1
VGE
IC@TC=100℃
IC@TC=25℃
Continuous Collector Current
Gate-Emitter Voltage
Continuous Collector Current
A
V
120
A
±30
30
60
A
AP30G100W
Symbol
VCES
1000V
30A
Rating
Collector-Emitter Voltage
Units
V
1000
℃
/W
Thermal Resistance Junction-Case
Parameter
Value
0.6
Reverse Transfer Capacitance
TSTG
Gate-Collector Charge
Total Gate Charge
Parameter
Gate-to-Emitter Leakage Current
Turn-on Delay Time
Collect-to-Emitter Breakdown Voltage
℃
Maximum Lead Temp. for Soldering Purposes
300
G
C
E
TO-3P
G
C
E
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