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參數資料
型號: AP4411GM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 8.2 A, 30 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, SOP-8
文件頁數: 1/4頁
文件大小: 70K
代理商: AP4411GM
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
-30V
▼ Low On-resistance
RDS(ON)
25mΩ
▼ Fast Switching
ID
-8.2A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
50
℃/W
Data and specifications subject to change without notice
Pb Free Plating Product
200901031
AP4411GM
Rating
-30
-8.2
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
-6.5
Pulsed Drain Current
1
-40
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.02
Storage Temperature Range
Thermal Data
Parameter
Total Power Dissipation
± 25
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
G
D
SO-8
G
D
S
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相關代理商/技術參數
參數描述
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