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參數(shù)資料
型號: AP4502GM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 8.3 A, 20 V, 0.016 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁數(shù): 1/7頁
文件大小: 118K
代理商: AP4502GM
Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
20V
▼ Low Gate Charge
RDS(ON)
18mΩ
▼ Fast Switching Performance
ID
8.3A
P-CH BVDSS
-20V
RDS(ON)
45mΩ
Description
ID
-5A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS
Drain-Source Voltage
-20
V
VGS
Gate-Source Voltage
+12
V
ID@TA=25℃
Continuous Drain Current
3
-5
A
ID@TA=70℃
Continuous Drain Current
3
-4
A
IDM
Pulsed Drain Current
1
-20
A
PD@TA=25℃
Total Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
62.5
/W
Data and specifications subject to change without notice
8.3
6.5
30
200907155
Parameter
1
Thermal Data
AP4502GM
RoHS-compliant Product
20
+12
G2
D2
S2
G1
D1
S1
S1
G1
S2
G2
D1
D2
SO-8
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is widly preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
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