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參數資料
| 型號： | AP4523GD |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 5.6 A, 40 V, 0.04 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, DIP-8 |
| 文件頁數： | 1/7頁 |
| 文件大?。?/td> | 96K |
| 代理商： | AP4523GD |
Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼
▼ Low Gate Charge
N-CH BVDSS
40V
▼
▼ Fast Switching Speed
RDS(ON)
40mΩ
▼
▼ PDIP-8 Package
ID
5.6A
▼
▼ RoHS Compliant
P-CH
BVDSS
-40V
RDS(ON)
52mΩ
Description
ID
-5.1A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS
Drain-Source Voltage
40
-40
V
VGS
Gate-Source Voltage
±10
±20
V
ID@TA=25℃
Continuous Drain Current
3
5.6
-5.1
A
ID@TA=70℃
Continuous Drain Current
3
4.5
-4
A
IDM
Pulsed Drain Current
1
30
-30
A
PD@TA=25℃
Total Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
62.5
℃/W
Data and specifications subject to change without notice
Parameter
201129051-1/7
Thermal Data
AP4523GD
Pb Free Plating Product
D1
D2
S1
G1
S2
G2
PDIP-8
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
D2
S2
G1
D1
S1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AP4523GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Good Thermal Performance |
| AP4523GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
| AP4525GEH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4525GEH_08 | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4525GEH-A | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:NAND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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