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參數資料
| 型號： | AP4810GSM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 105K |
| 代理商： | AP4810GSM |
Advanced Power
N-CHANNEL MOSFET WITH SCHOTTKY
Electronics Corp.
DIODE
▼ Simple Drive Requirement
BVDSS
30V
▼ Good Recovery Time
RDS(ON)
13.5m
▼ Fast Switching Performance
ID
11A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
VKA
V
IF@TA=25℃
A
IFM
A
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
50
℃
/W
Rthj-a
60
℃
/W
Data and specifications subject to change without notice
200910296
RoHS-compliant Product
1
30
+20
11
Maximum Thermal Resistance, Junction-ambient
3(Schottky)
Parameter
AP4810GSM
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
9.3
Pulsed Drain Current
1
50
Maximum Thermal Resistance, Junction-ambient
3(MOSFET)
Schottky Reverse Voltage
30
Continous Forward Current
1
Thermal Data
Pulsed Diode Forward Current
25
-55 to 150
Operating Junction Temperature Range
-55 to 150
Max Power Dissipation (Schottky)
2.0
Storage Temperature Range
Parameter
Max Power Dissipation (MOSFET)
2.5
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
G
D
SO-8
G
D
S
Schottky Diode
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