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參數(shù)資料
| 型號： | AP50T10GJ-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 38 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 60K |
| 代理商： | AP50T10GJ-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
100V
▼ Lower Gate Charge
RDS(ON)
28mΩ
▼ Fast Switching Characteristic
ID
38A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.4
℃/W
Rthj-a
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data and specifications subject to change without notice
AP50T10GH/J-HF
Halogen-Free Product
Parameter
Rating
Drain-Source Voltage
100
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
38
Storage Temperature Range
Continuous Drain Current, VGS @ 10V
24
Pulsed Drain Current
1
120
Total Power Dissipation
89.2
-55 to 150
Total Power Dissipation
3
2
Operating Junction Temperature Range
-55 to 150
201011152
Thermal Data
Parameter
1
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP50T10GJ) is
available for low-profile applications.
G
D
S
TO-252(H)
G
D
S
TO-251(J)
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|---|---|
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| AP50T10GS-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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