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參數資料
| 型號： | AP513 |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 放大器 |
| 英文描述： | 1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT PACKAGE-6 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 314K |
| 代理商： | AP513 |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 1 of 5 June 2006
AP513
DCS-band 8W HBT Amplifier Module
Product Information
Product Features
1805 – 1880 MHz
30 dB Gain
-64 dBc ACPR
@ 28 dBm CDMA2k 7fa Power
+39 dBm P1dB
+12 V Single Supply
Power Down Mode
Bias Current Adjustable
RoHS-complaint flange-mount pkg
Applications
Final stage amplifiers for Repeaters
Optimized for driver amplifier PA
mobile infrastructure
Product Description
The AP513 is a high dynamic range power amplifier in a
RoHS-compliant flange-mount package.
The multi-stage
amplifier module has 30 dB gain, while being able to achieve
high performance for DCS-band applications with +39 dBm
of compressed 1dB power. The module has been internally
optimized for linearity to provide -64 dBc ACPR at 28 dBm
power for 7-carrier CDMA2000 applications.
The AP513 uses a high reliability InGaP/GaAs HBT process
technology and does not require any external matching
components. The module operates off of a +12V supply and
does not requiring any negative biasing voltages; an internal
active bias allows the amplifier to maintain high linearity
over temperature. It has the added feature of a +5V power
down control pin. A low-cost metal housing allows the
device to have a low thermal resistance and achieves over
100 years MTTF. All devices are 100% RF and DC tested.
The AP513 is targeted for use as a driver or final stage
amplifier in wireless infrastructure where high linearity and
high power is required. This combination makes the device an
excellent candidate for next generation multi-carrier 3G base
stations or repeaters using the DCS1800 frequency band.
Functional Diagram
Top View
Pin No.
Function
1
RF Output
2 / 4
Vcc
3 / 5
Vpd
6
RF Input
Case
Ground
Specifications (1)
Parameter
Units
Min
Typ
Max Test Conditions
Operational Bandwidth
MHz
1805 – 1880
Test Frequency
MHz
1840
Adjacent Channel Power Ratio
dBc
-63.6
-60
CDMA2000 7fa +28 dBm Total Power, ±885 kHz offset
Power Gain
dB
27.8
30.3
32.8
Pout = +28 dBm
Input Return Loss
dB
14
Output Return Loss
dB
7.8
Output P1dB
dBm
+39
Output IP3
dBm
+50
Pout = +28 dBm/tone, Δf = 1 MHz
Operating Current (2)
A
1.67
Pout = +28 dBm
Quiescent Current, Icq (2)
A
1.55
1.70
1.80
Device Voltage, Vcc
V
+12
Device Voltage, Vpd
V
+5
Pull-down voltage: 0V = “OFF”, 5V=”O(jiān)N”
Ruggedness
VSWR
10:1
Pout = +39 dBm CW, all phases
1. Test conditions unless otherwise noted: 25 C.
2. The current can be adjusted through an external resistor from the 5V supply to the pull-down voltage pin (pin 3).
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature
-40 to +85
°C
Storage Temperature
-55 to +150
°C
RF Input Power (continuous)
CDMA2000 signal (fwd link, PAR 10.5 dB @ .01% prob)
+10 dBm
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
Description
AP513
DCS-band 8W HBT Amplifier Module
AP513-PCB
Fully-Assembled Evaluation Board
1 2 3
4 5 6
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