- 您現在的位置：買賣IC網 > PDF目錄68990 > AP602-F (TRIQUINT SEMICONDUCTOR INC) 800 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER PDF資料下載
參數資料
| 型號： | AP602-F |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 放大器 |
| 英文描述： | 800 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 5 X 6 MM, ROHS COMPLIANT, SMT, DFN-14 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 888K |
| 代理商： | AP602-F |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 1 of 11 May 2007 ver 1
AP602
High Dynamic Range 4W 28V HBT Amplifier
Product Features
800 – 2400 MHz
+35.7 dBm P1dB
-52 dBc ACLR @ W PAVG
-47 dBc IMD3 @ W PEP
16% Efficiency @ W PAVG
Internal Active Bias
Internal Temp Compensation
Capable of handling 7:1 VSWR @
28 Vcc, 2.14 GHz, 3W CW Pout
Lead-free/RoHS-compliant
5x6 mm power DFN package
Applications
Mobile Infrastructure HPA
WiBro HPA
Product Description
The AP602 is a high dynamic range power amplifier in a
lead-free/RoHS-compliant 5x6mm power DFN SMT
package. The single stage amplifier has excellent backoff
linearity, while being able to achieve high performance for
800-2400 MHz applications with up to +35.7 dBm of
compressed 1dB power.
The AP602 uses a high reliability, high voltage
InGaP/GaAs HBT process technology.
The device
incorporates proprietary bias circuitry to compensate for
variations in linearity and current draw over temperature.
The module does not require any negative bias voltage; an
internal active bias allows the AP602 to operate directly off
a commonly used high voltage supply (typically +24 to
+32V). An added feature allows the quiescent bias to be
adjusted externally to meet specific system requirements.
The AP602 is targeted for use as a pre-driver and driver
stage amplifier in wireless infrastructure where high
linearity and high efficiency is required. This combination
makes the device an excellent candidate for next generation
multi-carrier 3G mobile infrastructure.
Functional Diagram
ACLR1 vs. Output Power vs. Vcc
WCDMA, Icq = 80 mA, 2140 MHz, 25 C
-65
-60
-55
-50
-45
-40
19
21
23
25
27
29
Average Output Power (dBm)
AC
LR1
(dBc)
26 V
28 V
30 V
32 V
Specifications
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 80 mA
Parameter
Units Min
Typ
Max
Operational Bandwidth
MHz
800
2200
Test Frequency
MHz
2140
Output Channel Power
dBm
+27
Power Gain
dB
13
Input Return Loss
dB
9
Output Return Loss
dB
9
ACLR
dBc
-52
IMD3 @ +27 dBm PEP
dBc
-47
PIN_VPD Current, Ipd
mA
2
Operating Current, Icc
mA
112
Collector Efficiency
%
15.7
Output P1dB
dBm
+35.7
Quiescent Current, Icq
mA
80
Vpd, Vbias
V
+5
Vcc
V
+28
Absolute Maximum Rating
Parameter
Rating
Storage Temperature, Tstg
-55 to +125 C
Junction Temperature, TJ
For 106 hours MTTF
192 C
RF Input Power (CW tone), Pin
Input P6dB
Breakdown Voltage C-B, BVCBO
80 V @ 0.1 mA
Breakdown Voltage C-E, BVCEO
51 V @ 0.1 mA
Quiescent Bias Current, ICQ
160 mA
Power Dissipation, PDISS
4.7 W
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 80 mA
Parameter
Units
Typical
Test Frequency
MHz
940
1960
2140
Channel Power
dBm
+27
Power Gain
dB
15.5
14.2
13
Input Return Loss
dB
11
12
9
Output Return Loss
dB
6.4
9
ACLR
dBc
-50
-52
IMD3 @ +27 dBm PEP
dBc
-62
-51
-47
Operating Current, Icc
mA
103
112
Collector Efficiency
%
17
15.7
Output P1dB
dBm
+35.7
+35.5
+35.7
Quiescent Current, Icq
mA
80
Vpd, Vbias
V
+5
Vcc
V
+28
Notes:
1. The reference designs shown in this datasheet have the device optimized for WCDMA ACLR
performance at +25
° C. Biasing for the amplifier is suggested at Vcc = +28V and Icq = 80 mA to
achieve the best tradeoff in terms of efficiency and linearity. Increasing Icq will improve upon the
device linearity (IMD3 and ACLR), but will decrease the efficiency performance slightly. More
information is given in the other parts of this datasheet.
2. The AP602 evaluation board has been tested for ruggedness to be capable of handling:
7:1 VSWR @ +28 Vcc, 2140 MHz, 3W CW Pout,
5:1 VSWR @ +30 Vcc, 2140 MHz, 3W CW Pout,
3:1 VSWR @ +32 Vcc, 2140 MHz, 3W CW Pout.
Ordering Information
Part No.
Description
AP602-F
High Dynamic Range 28V 4W HBT Amplifier
AP602-PCB900
869-960 MHz Evaluation board
AP602-PCB1960 1930-1990 MHz Evaluation board
AP602-PCB2140 2110-2170 MHz Evaluation board
相關PDF資料 |
PDF描述 |
|---|---|
| ARA05050S12CTR | 5 MHz - 100 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| ARA2017RS29P8 | 5 MHz - 85 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| AWAT6130M7P8 | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| AWAT6130RM7P8 | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| AWT6241RM27Q7 | 1920 MHz - 1980 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AP602-PCB1960 | 功能描述:射頻開發工具 1930-1990MHz Brd 14.5dB Gain RoHS:否 制造商:Taiyo Yuden 產品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| AP602-PCB2140 | 功能描述:射頻開發工具 2110-2170MHz Brd 13dB Gain RoHS:否 制造商:Taiyo Yuden 產品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| AP602-PCB900 | 功能描述:射頻開發工具 869-960MHz Eval Brd 15.5dB Gain RoHS:否 制造商:Taiyo Yuden 產品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| AP603 | 制造商:WJCI 制造商全稱:WJCI 功能描述:High Dynamic Range 7W 28V HBT Amplifier |
| AP-603 | 功能描述:AIR FILTRATION PANEL AP-603 制造商:3m 系列:Versaflo?，AP-600 零件狀態:有效 類型:空氣過濾面板 標準包裝:1 |
發布緊急采購，3分鐘左右您將得到回復。