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參數資料
| 型號： | AP60T03GH |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 98K |
| 代理商： | AP60T03GH |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
30V
▼ Low Gate Charge
RDS(ON)
12m
▼ Fast Switching Characteristic
ID
45A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.4
℃
/W
Rthj-a
62.5
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃
/W
Data and specifications subject to change without notice
201009306
Thermal Data
Parameter
1
Linear Derating Factor
0.3
Storage Temperature Range
Continuous Drain Current, VGS @ 10V
32
Pulsed Drain Current
1
120
Total Power Dissipation
44
-55 to 175
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
45
Parameter
Rating
Drain-Source Voltage
30
AP60T03GH/J
RoHS-compliant Product
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Total Power Dissipation
3
2
Operating Junction Temperature Range
-55 to 175
G D
S
TO-252(H)
G
D
S
TO-251(J)
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP60T03GJ)
are available for low-profile applications.
相關PDF資料 |
PDF描述 |
|---|---|
| AP60T03GP | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP60T03GS | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AP60T06GJ-HF | 46 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP60T06GP-HF | 46 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP62T03GH | 54 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AP60T03GH/J | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60T03GH-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 30V 12MOHM TO-252 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 12MOHM, TO-252 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 12MOHM, TO-252, Transistor Polarity:N Channel, Continuous Drain Current Id:45A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.012ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:44W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 30V, 12MOHM, TO-252, Transistor Polarity:N Channel, Continuous Drai |
| AP60T03GI | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement Low Gate Charge |
| AP60T03GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60T03GJ-HF-3TB | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 30V 12MOHM TO-251 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 12MOHM, TO-251 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 12MOHM, TO-251, Transistor Polarity:N Channel, Continuous Drain Current Id:45A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.012ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:44W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 30V, 12MOHM, TO-251, Transistor Polarity:N Channel, Continuous Drai |
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