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參數(shù)資料
| 型號： | AP640R7-00 |
| 廠商： | Alpha Industries, Inc. |
| 英文描述： | 24-35 GHz GaAs MMIC High Power SPDT Reflective PIN Switch |
| 中文描述： | 24-35千兆赫的GaAs MMIC大功率單刀雙擲反光PIN開關 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 74K |
| 代理商： | AP640R7-00 |
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 2/00A
1
24–35 GHz GaAs MMIC
High Power SPDT Reflective PIN Switch
Features
I
Broad Bandwidth
I
Low Loss, < 1.5 dB
I
High Isolation, > 28 dB
I
Return Loss, < -12 dB
I
Fast Switching Speed, < 4 ns
I
High Power Handling, 40 dBm Peak,
36 dBm CW
Description
Alpha’s high power, single pole, double throw PIN diode
switch is a robust, high performance switch.It is ideal for
low loss, high isolation applications, particularly where
broad bandwidths and high power handling is required.
The chip uses Alpha’s proven PIN diode technology, and
is based upon MBE layers for the highest uniformity and
repeatability. The diodes employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
an epoxy die attach process.The GaAs MMIC employs
a specialized high power PIN diode in each arm and an
on-chip bias network. Chips are measured on a 100%
basis at 24, 28, 31 and 35 GHz for insertion loss, isolation,
input and output return losses, and also at DC for diode
breakdown voltage and turn on voltage.
Dimensions indicated in mm.
All pads are
≥
0.07 mm wide.
Chip thickness = 0.1 mm.
Chip Outline
Parameter
Symbol
IL
ISO
RL
I
RL
O
I
DD
Condition
Min.
Typ.
2
1.2
30
16
17
2
4
36
Max.
1.5
Unit
dB
dB
dB
dB
μ
A
ns
dBm
Insertion Loss
Isolation
Input Return Loss
Output Return Loss (Insertion State)
Leakage Current
Switching Speed
1
Output Power at 1 dB Compression
1
F = 24, 28, 31, 35 GHz
F = 24, 28, 31, 35 GHz
F = 24, 28, 31, 35 GHz
F = 24, 28, 31, 35 GHz
V = -50 V
28
12
14
20
P
1 dB
F = 35 GHz
Electrical Specifications at 25°C
0
0.000
1.100
2
1
0.988
2
0
0.398
Absolute Maximum Ratings
Characteristic
Value
Operating Temperature
-55
°
C to +125
°
C
Storage Temperature
-65
°
C to +150
°
C
DC Reverse Bias
-100 V (-20 mA)
DC Forward Bias
+2.6 V (100 mA)
P
IN
15 W
AP640R7-00
1. Not measured on a 100% basis.
2.Typical represents the median parameter value across the specified
frequency range for the median chip.
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| AP-640-T-A | 制造商:Samtec Inc 功能描述:CONN DIP ADPTR PL 40 POS 2.54MM ST TH - Bulk |
| AP-640-T-A1 | 制造商:Samtec Inc 功能描述:CONN DIP ADPTR PL 40 POS 2.54MM ST TH - Bulk |
| AP-640-T-B | 制造商:Samtec Inc 功能描述:CONN DIP ADPTR PL 40 POS 2.54MM ST TH - Bulk |
| AP-640-T-C | 制造商:Samtec Inc 功能描述:CONN DIP ADPTR PL 40 POS 2.54MM ST TH - Bulk |
| AP-640-T-D | 制造商:Samtec Inc 功能描述:CONN DIP ADPTR PL 40 POS 2.54MM ST TH - Bulk |
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