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參數資料
| 型號： | AP6900GSM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SOP-8 |
| 文件頁數： | 5/9頁 |
| 文件大小： | 134K |
| 代理商： | AP6900GSM |
Channel-1
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
5/9
AP6900GSM
0
10
20
30
40
012
3456
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A = 25
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0
10
20
30
40
01
23
45
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A = 150
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
18
22
26
30
34
38
2468
10
V GS , Gate-to-Source Voltage (V)
R
DS
(ON)
(m
Ω
)
I D =3 A
T A =25
o C
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rm
aliz
ed
R
DS
(ON)
I D =5 A
V G =10V
0
1
2
3
4
5
6
7
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S
(A
)
T j =25
o C
T j =150
o C
0.4
0.7
1.0
1.3
1.6
-50
0
50
100
150
T j ,Junction Temperature (
o C)
N
o
rm
aliz
ed
V
GS
(t
h
)(V
)
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