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參數資料
| 型號： | AP70T03GS |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT, TO-263, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 98K |
| 代理商： | AP70T03GS |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
30V
▼ Low Gate Charge
RDS(ON)
9mΩ
▼ Fast Switching Speed
ID
60A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
2.8
℃
/W
Rthj-a
40
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
-55 to 175
Operating Junction Temperature Range
-55 to 175
Linear Derating Factor
0.36
Pulsed Drain Current
1
195
Total Power Dissipation
53
Continuous Drain Current, VGS @ 10V
60
Continuous Drain Current, VGS @ 10V
43
Drain-Source Voltage
30
Gate-Source Voltage
+20
200903053
1
AP70T03GS/P
RoHS-compliant Product
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Parameter
Rating
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP70T03GP)
are available for low-profile applications.
G
D
S
TO-263(S)
G
D
S
TO-220(P)
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