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參數(shù)資料
| 型號： | AP83T02GJ-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 97K |
| 代理商： | AP83T02GJ-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
25V
▼ Simple Drive Requirement
RDS(ON)
6m
▼ Fast Switching Characteristic
ID
75A
▼ RoHS Compliant & Halogen-Free
Description
□
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
2.5
℃
/W
Rthj-a
62.5
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃
/W
Data & specifications subject to change without notice
Total Power Dissipation
3
2.4
AP83T02GH/J-HF
60
Halogen-Free Product
240
Parameter
Rating
Drain-Source Voltage
25
Total Power Dissipation
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
75
Continuous Drain Current, VGS @ 10V
53
Pulsed Drain Current
1
Thermal Data
Parameter
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
201006022
1
Storage Temperature Range
Operating Junction Temperature Range
-55 to 175
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP83T02GJ) is
available for low-profile applications.
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-251(J)
G
D S
TO-252(H)
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相關(guān)代理商/技術(shù)參數(shù) |
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