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參數資料
| 型號： | AP9410GMT-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 58K |
| 代理商： | AP9410GMT-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Capable of 2.5V Gate Drive
BVDSS
30V
▼ Simple Drive Requirement
RDS(ON)
5.5mΩ
▼ SO-8 Compatible
ID
80A
▼ Low On-resistance
▼ RoHS Compliant & Halogen-Free
Description
□
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TC=25℃
W
PD@TA=25℃
W
EAS
Single Pulse Avalanche Energy
4
mJ
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
2.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
25
℃/W
Data & specifications subject to change without notice
Total Power Dissipation
56.8
1
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
Total Power Dissipation
28.8
Thermal Data
Parameter
201003031
Gate-Source Voltage
+12
Continuous Drain Current
3, V
GS @ 4.5V
23.6
Continuous Drain Current (Chip), VGS @ 4.5V
Continuous Drain Current
3
19
Pulsed Drain Current
1
300
Parameter
Rating
Drain-Source Voltage
30
AP9410GMT-HF
5
Halogen-Free Product
80
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
The PMPAK
5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink.
S
G
PMPAK
5x6
D
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