欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: AP9467AGH
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 43 A, 40 V, 0.0115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數: 2/4頁
文件大小: 93K
代理商: AP9467AGH
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
40
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=30A
-
11.5
m
VGS=4.5V, ID=20A
-
20
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=20A
-
38
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=30A
-
9.5
15
nC
Qgs
Gate-Source Charge
VDS=32V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6.5
-
nC
td(on)
Turn-on Delay Time
2
VDS=20V
-
7
-
ns
tr
Rise Time
ID=30A
-
64
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
18
-
ns
tf
Fall Time
RD=0.67Ω
-6
-
ns
Ciss
Input Capacitance
VGS=0V
-
660
1060
pF
Coss
Output Capacitance
VDS=25V
-
140
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.2
3.3
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VSD
Forward On Voltage
2
IS=30A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=10A, VGS=0V,
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
14
-
nC
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
3.Surface mounted on 1 in
2 copper pad of FR4 board
AP9467AGH
相關PDF資料
PDF描述
AP9469GM 40 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
AP9476GM-HF 60 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET
AP9560GP-HF 51 A, 40 V, 0.0125 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP9561GH-HF 45 A, 40 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
AP9561GJ-HF 45 A, 40 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
相關代理商/技術參數
參數描述
AP9467AGH-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9467AGM 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9467AGM-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9467AGMT-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9467GH-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
主站蜘蛛池模板: 佛学| 光山县| 新民市| 正安县| 竹北市| 台湾省| 浮梁县| 白城市| 黄山市| 乐亭县| 和平县| 罗源县| 五家渠市| 嘉峪关市| 德庆县| 海城市| 寻乌县| 临澧县| 湾仔区| 义乌市| 吴川市| 乐亭县| 龙海市| 普宁市| 丹寨县| 玉溪市| 禄丰县| 迭部县| 民丰县| 南开区| 阿尔山市| 东山县| 土默特左旗| 封丘县| 山东省| 库尔勒市| 喜德县| 长岛县| 兰坪| 嘉禾县| 怀来县|