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參數資料
| 型號： | AP9510GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 6.9 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SOP-8 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 96K |
| 代理商： | AP9510GM |
Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼
▼ Simple Drive Requirement
N-CH BVDSS
30V
▼
▼ Low On-resistance
RDS(ON)
28mΩ
▼
▼ Fast Switching Performance
ID
6.9A
P-CH
BVDSS
-30V
RDS(ON)
55mΩ
Description
ID
-5.3A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
± 20
V
ID@TA=25℃
Continuous Drain Current
3
6.9
-5.3
A
ID@TA=70℃
Continuous Drain Current
3
5.5
-4.2
A
IDM
Pulsed Drain Current
1
30
-30
A
PD@TA=25℃
Total Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
62.5
℃/W
Data and specifications subject to change without notice
Parameter
200831042
AP9510GM
Thermal Data
Pb Free Plating Product
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
S1
G1
S2
G2
D1
D2
SO-8
G2
D2
S2
G1
D1
S1
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