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參數(shù)資料
| 型號： | AP9565AGJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 18.5 A, 40 V, 0.042 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 97K |
| 代理商： | AP9565AGJ |
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower Gate Charge
BVDSS
-40V
▼ Simple Drive Requirement
RDS(ON)
42mΩ
▼ Fast Switching Characteristic
ID
-18.5A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
5.0
℃
/W
Rthj-a
62.5
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃
/W
Data and specifications subject to change without notice
25
-55 to 150
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
-55 to 150
Linear Derating Factor
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
-14.8
Pulsed Drain Current
1
-72
+20
-18.5
0.2
RoHS-compliant Product
AP9565AGH/J
Rating
-40
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
200906183
1
Thermal Data
Parameter
G
D
S
G
D
S
TO-252(H)
G
D
S
TO-251(J)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9565AGJ)
is available for low-profile applications.
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
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