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參數資料
| 型號： | AP9585GJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 11.2 A, 80 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 102K |
| 代理商： | AP9585GJ |
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower Gate Charge
BVDSS
-80V
▼ Simple Drive Requirement
RDS(ON)
180mΩ
▼ Fast Switching Characteristic
ID
-11.2A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
2.8
℃
/W
Rthj-a
62.5
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃
/W
Data and specifications subject to change without notice
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
RoHS-compliant Product
200810021
1
AP9585GH/J
Rating
-80
+25
-11.2
0.36
44.6
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
-7.1
Pulsed Drain Current
1
-30
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
-55 to 150
Linear Derating Factor
Thermal Data
G
D
S
G D
S
TO-252(H)
G
D
S
TO-251(J)
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9585GJ) is
available for low-profile applications.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AP9585GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9585GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9585H | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP9585J | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP9585M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
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