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參數資料
| 型號： | AP95T06BGP |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 60 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 114K |
| 代理商： | AP95T06BGP |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
60V
▼ Lower On-resistance
RDS(ON)
9mΩ
▼ Fast Switching Characteristic
ID
75A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
EAS
Single Pulse Avalanche Energy
4
mJ
IAR
Avalanche Current
A
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.9
℃/W
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
138
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
1.11
450
30
Continuous Drain Current, VGS @ 10V
57
Pulsed Drain Current
1
260
Gate-Source Voltage
±20
Continuous Drain Current, VGS @ 10V
3
75
Parameter
Rating
Drain-Source Voltage
60
AP95T06BGP
RoHS-compliant Product
200804281
1
G
D
S
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
G
D
S
TO-220(P)
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