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參數資料
| 型號： | AP95T10GW-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 120 A, 100 V, 0.0064 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 94K |
| 代理商： | AP95T10GW-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
100V
▼ Lower On-resistance
RDS(ON)
6.4m
▼ RoHS Compliant & Halogen-Free
ID
150A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
ID@TC=25℃
A
IDM
A
PD@TC=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.4
℃
/W
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
40
℃
/W
Data and specifications subject to change without notice
201005261
1
AP95T10GW-HF
Halogen-Free Product
-55 to 175
120
Parameter
Rating
Drain-Source Voltage
100
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V(Silicon Limited)
150
Continuous Drain Current, VGS @ 10V(Silicon Limited)
108
Pulsed Drain Current
1
600
Continuous Drain Current, VGS @ 10V(Package Limited)
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
375
-55 to 175
Operating Junction Temperature Range
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-3P package is widely preferred for commercial-industrial
surface mount applications and suited for higher voltage applications
such as SMPS.
G
D
S
TO-3P
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