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參數資料
型號: AP9685GM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 5.3 A, 80 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁數: 1/4頁
文件大小: 72K
代理商: AP9685GM
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
80V
▼ Lower Gate Charge
RDS(ON)
45mΩ
▼ Fast Switching Characteristic
ID
5.3A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
50
℃/W
Data and specifications subject to change without notice
200825051-1/4
AP9685GM
Rating
80
±20
5.3
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
0.02
Storage Temperature Range
Continuous Drain Current
3
3.4
Pulsed Drain Current
1
50
Pb Free Plating Product
Thermal Data
Parameter
Total Power Dissipation
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
S
G
D
SO-8
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