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參數(shù)資料
| 型號： | AP9918GJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 20 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 217K |
| 代理商： | AP9918GJ |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low on-resistance
BVDSS
20V
▼ Capable of 2.5V gate drive
RDS(ON)
14mΩ
▼ Low drive current
ID
45A
▼ Surface mount package
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
oC
TJ
oC
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
4.0
oC/W
Rthj-a
62.5
oC/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
oC/W
Data and specifications subject to change without notice
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
RoHS-compliant Product
200901122
1
AP9918GH/J
Parameter
Rating
Drain-Source Voltage
20
Gate-Source Voltage
+12
Continuous Drain Current, VGS @ 4.5V
45
Continuous Drain Current, VGS @ 4.5V
20
Pulsed Drain Current
1
140
Total Power Dissipation
31.25
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.25
Thermal Data
Parameter
Storage Temperature Range
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
D
S
TO-251(J)
G
D S
TO-252(H)
G
D
S
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